By Leonard J. Brillson
"An crucial consultant to digital fabric Surfaces and Interfaces is a streamlined but accomplished creation that covers the elemental actual houses of digital fabrics, the experimental options used to degree them, and the theoretical tools used to appreciate, expect, and layout them. beginning with the basic digital houses of semiconductors and electric measurements of semiconductor interfaces, this article introduces scholars to the significance of characterizing and controlling macroscopic electric homes via atomic-scale thoughts. The chapters that keep on with current the whole variety of floor and interface ideas now getting used to signify digital, optical, chemical, and structural homes of digital fabrics, together with semiconductors, insulators, nanostructures, and organics. the basic physics and chemistry underlying each one strategy is defined in enough intensity for college students to grasp the elemental ideas, with quite a few examples to demonstrate the strengths and obstacles for particular functions. in addition to references to the main authoritative assets for broader discussions, the textual content contains web hyperlinks to extra examples, mathematical derivations, tables, and literature references for the complicated scholar, in addition to pros in those fields. This textbook fills a niche within the current literature for an entry-level path that offers the actual homes, experimental suggestions, and theoretical tools crucial for college kids and execs to appreciate and perform solid-state electronics, physics, and fabrics technological know-how research"-- Read more...
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Extra resources for An essential guide to electronic material surfaces and interfaces
What image force dielectric constant is consistent with the barrier height change? 11. 6 showing the first transistor, speculate on how the inventors achieved low resistance contacts. 12. Solar cells operate by absorbing light, generating free electron–hole pairs that separate inside a built-in electric field, generating a voltage. Give two reasons why the external contacts to the solar cell must be both Ohmic and low resistance. 13. Among the I–V, C–V, and IPS techniques to measure Schottky barrier heights, which would be easiest to interpret for: (a) diodes with two different ????SB under the same metal contact, (b) diodes on an indirect band gap semiconductor, and (c) diodes on a semiconductor with a voltage-dependent dielectric permittivity?
E. (1965) Surface-state and interface effects in Schottky barriers at n-type silicon surfaces. J. Appl. , 36, 3843. 21. , and D. Hoffman, D. (1968) Electric field dependence of GaAs Schottky barriers. , 11, 20. 22. G. (1964) Equality of the temperature dependence of the gold-silicon surface barrier and the silicon energy gap in Au n-type Si diodes. Appl. Phys. , 4, 91. 23. , et al. (1992) Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements.
And D. Hoffman, D. (1968) Electric field dependence of GaAs Schottky barriers. , 11, 20. 22. G. (1964) Equality of the temperature dependence of the gold-silicon surface barrier and the silicon energy gap in Au n-type Si diodes. Appl. Phys. , 4, 91. 23. , et al. (1992) Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements. J. Vac. Sci. , B, 10, 1932. 24. C. B. (1978) Heterojunction Lasers, Part A: Fundamental Principles; Part B: Materials and Operating Characteristics, Academic Press, New York.