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By Leonard J. Brillson

"An crucial consultant to digital fabric Surfaces and Interfaces is a streamlined but accomplished creation that covers the elemental actual houses of digital fabrics, the experimental options used to degree them, and the theoretical tools used to appreciate, expect, and layout them. beginning with the basic digital houses of semiconductors and electric measurements of Read more...

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a necessary consultant to digital fabric Surfaces and Interfaces is a streamlined but accomplished creation that covers the elemental actual houses of digital fabrics, the experimental Read more...

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Extra resources for An essential guide to electronic material surfaces and interfaces

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What image force dielectric constant is consistent with the barrier height change? 11. 6 showing the first transistor, speculate on how the inventors achieved low resistance contacts. 12. Solar cells operate by absorbing light, generating free electron–hole pairs that separate inside a built-in electric field, generating a voltage. Give two reasons why the external contacts to the solar cell must be both Ohmic and low resistance. 13. Among the I–V, C–V, and IPS techniques to measure Schottky barrier heights, which would be easiest to interpret for: (a) diodes with two different ????SB under the same metal contact, (b) diodes on an indirect band gap semiconductor, and (c) diodes on a semiconductor with a voltage-dependent dielectric permittivity?

E. (1965) Surface-state and interface effects in Schottky barriers at n-type silicon surfaces. J. Appl. , 36, 3843. 21. , and D. Hoffman, D. (1968) Electric field dependence of GaAs Schottky barriers. , 11, 20. 22. G. (1964) Equality of the temperature dependence of the gold-silicon surface barrier and the silicon energy gap in Au n-type Si diodes. Appl. Phys. , 4, 91. 23. , et al. (1992) Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements.

And D. Hoffman, D. (1968) Electric field dependence of GaAs Schottky barriers. , 11, 20. 22. G. (1964) Equality of the temperature dependence of the gold-silicon surface barrier and the silicon energy gap in Au n-type Si diodes. Appl. Phys. , 4, 91. 23. , et al. (1992) Inhomogeneous and wide range of barrier heights at metal/molecular-beam epitaxy GaAs(100) interfaces observed with electrical measurements. J. Vac. Sci. , B, 10, 1932. 24. C. B. (1978) Heterojunction Lasers, Part A: Fundamental Principles; Part B: Materials and Operating Characteristics, Academic Press, New York.

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