Download Advances in Research by Frederick Seitz, David Turnbull and Henry Ehrenreich (Eds.) PDF

By Frederick Seitz, David Turnbull and Henry Ehrenreich (Eds.)

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C. S. Smith, Solid State Phys. 6 , 175 (1958). L. J. Bruner and R. W. Keyes, Phys. Rev. Letters 7 , 55 (1961). R. W. Keyes, IBM J. Res. Develop. 6 , 266 (1961). lo 41 ELECTRONIC EFFECTS I N ELASTIC CONSTANTS strain. 3) N ( S ( E ) is the density of states in energy of band (i), and l is the Fermi level of the electrons in the semiconductor. is used to indicate a sum over the bands (i). Let the semiconductor be strained, and call the shift in energy of band (i) caused by the strain Wi). It is then necessary to replace L V ( ~ ) ( by E) W ( E - Wi)) in Eqs.

5. Thermal Propertie ......................................... 6. Third-Order Elast nts . . . . . . . . . . . . . . . . . . . IV. Electronic Strain. . . . . . . . . . . . . . . . . . . . . . . . . . . 7. Photostriction. . . . . . . ............................. 8. Doping by Electron Irradiation. . . . . . . . . . . . . . . . . . . 9. Electronic Magnetostriction in Bismuth. . . . . . .

Bennemann performs a rather extended wave-mechanical calculation resuIting in approximate wave functions that give the density of the valence electrons besides their energy and the self-consistent crystal potential. Table IV contains also the reliability factors R for the different calcuTABLEIV. 37 FI = Dawson, Eq. 3); FII = Dawson, Eq. 4). FIII = Clark,46 FIV = B e n n e ~ n a n n . 1 H. Clark, Phys. Letters 11,41 (1964). K. H. Bennemann, Phys. Rev. 133, A1045 (1964). 33 - 28 R. BRILL lations.

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